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Photocell, Pinned
Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); 40 V
Photoconductive Cell; 1 Megohms (Min.); 0.90 (Typ.); 100 Vpeak (Max.); -40 degC
PINNED PHOTOCELL
Silicon photodiode; hermetic TO-46; flat window; IR blocking; blue; intermed. FOV
Silicon photodiode; hermetic TO-46; IR blocking filter; blue enhanced; narrow FOV
Silicon photodiode TO-46 spectral response between 330 and 720nm
Silicon photodiode; hermetic TO-46; blue enhanced; very low dark current; narrow FOV
Silicon photodiode; ceramic; blue enhanced; very low dark current; wide FOV
Silicon photodiode; hermetic TO-5; flat window; IR blocking filter; blue; wide FOV
Silicon photodiode; three lead TO-5 hermetic; flat window; UV enhanced; Wide FOV
Silicon photodiode; hermetic TO-8; flat window; IR blocking; blue; Wide field of view
Silicon photodiode; hermetic TO-8; flat window; blue; wide field of view
VTB Process Photodiode; 40v ; 355 ua ; TO-8 pckg
Silicon photodiode; three lead TO-8 hermetic; flat window; UV enhanced; wide FOV
Planar silicon photodiode; two lead ceramic; high shunt resistance; blue response
Silicon photodiode; 8mm ceramic; blue enhanced; low dark current; wide field of view
Blue silicon photodiode; 8mm substrate; IR blocking; 5.2mm; 330nm-720nm
Silicon photodiode; 6mm ceramic; IR blocking; blue enhanced; wide field of view
Silicon photodiode; 6mm ceramic; blue; very low dark current; wide field of view
Photodiode; Case 22 Mini DIP; 70 muA (Typ.); 365 mV (Typ.); 30 nA (Max.); -20 d
TO-46, Flat Window GaAlAs IRED, 880nm
880 nm IRED. T-1 ¾ (5mm); 20 mW output power; Narrow beam angle of ±10°
Infrared Emitting Diodes, 880nm, 200mW, 1.5V
EMITTER, IR, LATERAL
880 nm IRED T-1 (5mm); 3 mW output; narrow emission profile of ±10°; GaAlAs chip
880 nm IRED lateral; 4.57x1.65 mm; 2.5 mWoutput power; emission profile of ±25°
880 nm IRED lateral; 4.57x1.65 mm.; 5 mW output power; emission profile of ±25°
Silicon photodiode; lateral; fast response; low dark current; wide field of view
Silicon photodiode; hermetic TO-46; fast response; dark current; wide field of view
Small area planar silicon photodiode ina lensed; dual lead TO-46 package
Silicon photodiode; ceramic; plastic molded lens; fast response; low dark current
Silicon Photodiode; clear; T-1 3 #4 flat package; Integral IR rejection filter
Silicon photodiode; long T1 package; fastresponse; dark current; intermediate FOV
Large area planar silicon; two lead ceramic; coated with a layer of clear epoxy
SILICON PHOTODIODES
Silicon photodiode; lateral; fast response; dark current; wide field of vision
Planar silicon photodiode; two lead ceramic; coated with thick layer clear epoxy
Silicon photodiode; 6 mm ceramic; fast response; dark current; wide field of view
Photo Diode; Peak Reflow Compatible (260 C)
Photodiode; 30 Series; 0.69 mA (Typ.); 0.45 V (Typ.); 0.05 muA (Typ.); -40 deg
Photodiode; 925nm (typ.); 0.6A/W; drk cur 40nA
Photodiode; 0.16 mA (Typ.); 0.45 V (Typ.); 0.02 uA (Typ.); 0.5 nF (Typ.); 0.2
Photodiode; 0.16 mA (Typ.); 0.45 V (Typ.); 0.02 muA (Typ.); 0.50 nF (Typ.)
NPN Silicon phototransistor; hermetic TO-46; fast response; wide field of view
NPN Silicon phototransistor; T1; fast response; narrow field of view
NPN Silicon phototransistor; lateral; fast response; Wide field of view